N25Q128A13BSF40F NUMONYX, N25Q128A13BSF40F Datasheet - Page 104

no-image

N25Q128A13BSF40F

Manufacturer Part Number
N25Q128A13BSF40F
Description
IC SRL FLASH 128MB NMX 16-SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of N25Q128A13BSF40F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
N25Q128A13BSF40F
Manufacturer:
MICRON
Quantity:
15 000
Part Number:
N25Q128A13BSF40F
Manufacturer:
ST
0
Part Number:
N25Q128A13BSF40F
Manufacturer:
MICRON
Quantity:
20 000
Instructions
9.2.24
9.2.25
104/157
Figure 68. Write Volatile Configuration Register instruction sequence DIO-SPI
Read Volatile Enhanced Configuration Register
The Read Volatile Enhanced Configuration Register (RDVECR) instruction allows the
Volatile Configuration Register to be read.
Figure 69. Read Volatile Enhanced Configuration Register instruction sequence
Write Volatile Enhanced Configuration Register
The Write Volatile Enhanced Configuration register (WRVECR) instruction allows new
values to be written to the Volatile Enhanced Configuration register. Before it can be
accepted, a write enable (WREN) instruction must previously have been executed.
DQ0
DQ0
DQ1
DQ1
C
C
S
S
DIO-SPI
0
0
Instruction
Instruction
1
1
2
2
3
3
7
7
6
6
4
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Configuration Register Out
5
5
4
4
Volatile Configuration
5
5
Byte
Byte
Volatile Enhanced
3
3
2
2
6
6
Register In
1
1
0
0
7
7
7
6
8
5
4
9 10 11
Byte
3
2
©2010 Micron Technology, Inc. All rights reserved.
1
0
N25Q128 - 3 V

Related parts for N25Q128A13BSF40F