N25Q128A13BSF40F NUMONYX, N25Q128A13BSF40F Datasheet - Page 144

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N25Q128A13BSF40F

Manufacturer Part Number
N25Q128A13BSF40F
Description
IC SRL FLASH 128MB NMX 16-SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of N25Q128A13BSF40F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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N25Q128A13BSF40F
Manufacturer:
MICRON
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Manufacturer:
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DC and AC parameters
Table 37.
1. All values are guaranteed by characterization and not 100% tested in production.
2. The device reset is possible but not guaranteed if tRLRH < 50 ns.
144/157
tRLRH
tRHSL
tSHRV
tSHSL3
Symbol
(1)
(1)(2)
(1)
Reset Conditions
tRST
tREC
tREC1
Alt.
Reset pulse width
Reset Recovery
Time
S# deselect to R
valid
Software reset
recovery time
Parameter
Device selected (S low), while decoding
any modify instruction, during all read
operations, CLFSR, WRDI, WREN,
WRLR, WRVCR, WRVECR.
Under completion of an internal erase or
program cycle related to POTP, PP, DIEFP,
DIFP, QIEFP, QIFP, SE, BE, PER, PES.
Under completion of an SSE operation.
Under completion of an WRSR operation.
Under completion of an WRNVCR
operation.
Device deselected (S high) and in XiP
mode.
Device deselected (S high) and in Standby
mode.
Deselect to R valid in Quad Output or in
QIO-SPI.
Upon completion of an internal erase or
program cycle related to POTP, PP, DIEFP,
DIFP, QIEFP, QIFP, SE, BE, PER, PES
Upon completion or suspension of an SSE
operation
Upon completion or suspension of an
WRSR operation
Upon completion or suspension of an
WRNVCR operation
Device deselected and in standby (S high)
mode.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Conditions
©2010 Micron Technology, Inc. All rights reserved.
Min
t
t
t
t
t
t
SSE
W
WNVCR
SSE
W
WNVCR
Typ
N25Q128 - 3 V
50
40
30
40
40
2
30
90
Max Unit
ns
ns
µs
ms
ms
ms
ns
ns
ns
µs
ms

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