N25Q128A13BSF40F NUMONYX, N25Q128A13BSF40F Datasheet - Page 97
![no-image](/images/manufacturer_photos/0/4/484/numonyx_sml.jpg)
N25Q128A13BSF40F
Manufacturer Part Number
N25Q128A13BSF40F
Description
IC SRL FLASH 128MB NMX 16-SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.N25Q128A13B1240F.pdf
(157 pages)
Specifications of N25Q128A13BSF40F
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
N25Q128A13BSF40F
Manufacturer:
MICRON
Quantity:
15 000
Part Number:
N25Q128A13BSF40F
Manufacturer:
MICRON
Quantity:
20 000
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N25Q128 - 3 V
9.2.10
9.2.11
DQ0
DQ1
DQ0
DQ1
C
S
C
S
Figure 54. Subsector Erase instruction sequence DIO-SPI
Sector Erase (SE)
The Sector Erase (SE) instruction sets to '1' (FFh) all bits inside the chosen sector. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
Except for the parallelizing of the instruction code and the address on the two pins DQ0 and
DQ1, the instruction functionality is exactly the same as the Sector Erase (SE) instruction of
the Extended SPI protocol.
Figure 55. Sector Erase instruction sequence DIO-SPI
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to '1' (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed.
0
0
Instruction
Instruction
1
1
2
2
3
3
23 21 19 17
22 20 18 16
4
23 21 19 17
22 20 18 16
4
5
5
6
6
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
24-Bit Address
7
15 13 11 9
14 12 10 8
8
24-Bit Address
15 13 11
14 12 10
8
9 10 11
9
10 11
9
8
12 13 14 15
7
6
12 13 14 15
©2010 Micron Technology, Inc. All rights reserved.
7
6
5
4
5
3
4
2
1
3
0
2
1
0
Instructions
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