N25Q128A13BSF40F NUMONYX, N25Q128A13BSF40F Datasheet - Page 32

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N25Q128A13BSF40F

Manufacturer Part Number
N25Q128A13BSF40F
Description
IC SRL FLASH 128MB NMX 16-SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of N25Q128A13BSF40F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Volatile and Non Volatile Registers
32/157
Figure 8.
A Flag Status Register (FSR), 8 bits, is also available to check the status of the device,
detecting possible errors or a Program/Erase internal cycle in progress.
Each register can be read and modified by means of dedicated instructions in all the 3
protocols (Extended SPI, DIO-SPI, and QIO-SPI).
Reading time for all registers is comparable; writing time instead is very different: NVCR bits
are set as Flash Cell memory content requiring a longer time to perform internal writing
cycles. See
Register download executed only
during the power on phase
(Non Volatile Configuratio n Register)
Table 36.: AC
Non Volatile and Volatile configuration Register Scheme
NVCR
Characteristics.
(internal Configuration Register)
Device behaviour
Micron Technology, Inc., reserves the right to change products or specifications without notice.
iCR
VCR
Co nfiguratio n Register)
and VECR
Registers download executed after
a WRVCR or WRVECR
instructions, it overwrites NVCR
configurations on iCR
(Volatile Configuration Register)
(Volatile Enhanced
©2010 Micron Technology, Inc. All rights reserved.
N25Q128 - 3 V

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