PIC18F27J53-I/ML Microchip Technology, PIC18F27J53-I/ML Datasheet - Page 529
![IC PIC MCU 128KB FLASH 28QFN](/photos/18/33/183309/qfn-28_sml.jpg)
PIC18F27J53-I/ML
Manufacturer Part Number
PIC18F27J53-I/ML
Description
IC PIC MCU 128KB FLASH 28QFN
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheets
1.PIC18LF24J10-ISS.pdf
(32 pages)
2.PIC18F26J13-ISS.pdf
(496 pages)
3.PIC18F26J53-ISS.pdf
(586 pages)
4.PIC18F26J53-ISS.pdf
(12 pages)
Specifications of PIC18F27J53-I/ML
Program Memory Type
FLASH
Program Memory Size
128KB (64K x 16)
Package / Case
*
Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, LIN, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
22
Ram Size
3.8K x 8
Voltage - Supply (vcc/vdd)
2.15 V ~ 3.6 V
Data Converters
A/D 10x10b/12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
3.8 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
48 MHz
Number Of Programmable I/os
16
Number Of Timers
8
Operating Supply Voltage
2.15 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Controller Family/series
PIC18
Cpu Speed
48MHz
Embedded Interface Type
I2C, SPI, USART
Digital Ic Case Style
QFN
Supply Voltage Range
1.8V To 5.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
- PIC18LF24J10-ISS PDF datasheet
- PIC18F26J13-ISS PDF datasheet #2
- PIC18F26J53-ISS PDF datasheet #3
- PIC18F26J53-ISS PDF datasheet #4
- Current page: 529 of 586
- Download datasheet (6Mb)
TABLE 31-1:
TABLE 31-2:
TABLE 31-3:
2010 Microchip Technology Inc.
DC CHARACTERISTICS
D130
D131
D132B V
D133A T
D133B T
D134
D135
Operating Conditions: 3.0V < V
D300
D301
D302
300
301
Note 1:
Operating Conditions: 3.0V < V
D310
D311
D312
310
Note 1:
Param
Param
No.
Param
No.
No.
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
I
DDP
Sym
IW
IE
RETD
P
PR
PEW
only and are not tested.
Response time measured with one comparator input at V
V
Settling time measured while CVRR = 1 and CVR<3:0> bits transition from ‘0000’ to ‘1111’.
V
VR
VR
T
DD
V
V
V
CMRR
T
T
SET
RES
RESP
MC
IOFF
ICM
IRV
Sym
.
AA
UR
Sym
Program Flash Memory
Cell Endurance
V
V
Write
Self-Timed Write Cycle Time
Self-Timed Block Erase Cycle
Time
Characteristic Retention
Supply Current during
Programming
2
MEMORY PROGRAMMING REQUIREMENTS
COMPARATOR SPECIFICATIONS
VOLTAGE REFERENCE SPECIFICATIONS
OV
DD
DDCORE
core for Read
Resolution
Absolute Accuracy
Unit Resistor Value (R)
Settling Time
Input Offset Voltage
Input Common Mode Voltage
Internal Reference Voltage
Common Mode Rejection Ratio
Response Time
Comparator Mode Change to
Output Valid
Characteristic
for Self-Timed Erase or
Characteristics
Characteristics
DD
DD
(1)
< 3.6V, -40°C < T
< 3.6V, -40°C < T
(1)
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
V
2.25
10K
Min
A
A
20
—
—
—
MIN
V
< +85°C (unless otherwise stated)
< +85°C (unless otherwise stated)
DD
Min
—
—
—
/24
0.57
PIC18F47J53 FAMILY
Min
55
—
—
—
Typ†
0
33.0
2.8
—
—
—
—
3
Typ
—
—
2k
—
DD
/2, while the other input transitions from V
0.60
Typ
150
+5
—
—
—
Max
2.75
2.75
V
—
—
—
—
—
Max
DD
1/2
10
—
/32
Units
Year Provided no other
E/W -40C to +85C
mA
ms
ms
Max
0.63
V
+25
400
V
V
—
10
Units
DD
LSb
LSb
A
s
+85°C for industrial
V
voltage
64 bytes
specifications are violated
MIN
Units
= Minimum operating
mV
dB
ns
s
V
V
Conditions
Comments
DS39964B-page 529
Comments
SS
to
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