HD6417750RF200DV Renesas Electronics America, HD6417750RF200DV Datasheet - Page 552

• Manufacturer Part Number: HD6417750RF200DV
• Description: MPU 1.5/3.3V 0K I-TEMP PB-FREE 2
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7750r

Specifications of HD6417750RF200DV

• Core Processor: SH-4
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: EBI/EMI, FIFO, SCI, SmartCard
• Peripherals: DMA, POR, WDT
• Number Of I /o: 28
• Program Memory Type: ROMless
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 1.35 V ~ 1.6 V
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 208-QFP Exposed Pad, 208-eQFP, 208-HQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -

Section 13 Bus State Controller (BSC)
Byte specification is performed by DQM0 to DQM7. A read/write is performed for the byte for
which the corresponding DQM signal is low. When the bus width is 64 bits, in big-endian mode
DQM7 specifies an access to address 8n, and DQM0 specifies an access to address 8n + 7. In
little-endian mode, DQM7 specifies an access to address 8n + 7, and DQM0 specifies an access to
address 8n.
Figures 13.26 and 13.27 show examples of the connection of 16M × 16-bit synchronous DRAMs.
Rev.7.00 Oct. 10, 2008 Page 466 of 1074
REJ09B0366-0700
Figure 13.26 Example of 64-Bit Data Width Synchronous DRAM Connection (Area 3)
SH7750, SH7750S, SH7750R
D63–D48
D47–D32
D31–D16
D15–D0
A12–A3
RD/WR
DQM7
DQM6
DQM5
DQM4
DQM3
DQM2
DQM1
DQM0
CASS
CKIO
CKE
RAS
CS3
512K × 16-bit × 2-bank
synchronous DRAM
A9–A0
CLK
CKE
CS
RAS
CAS
WE
I/O15–I/O0
DQMU
DQML
A9–A0
CLK
CKE
CS
RAS
CAS
WE
I/O15–I/O0
DQMU
DQML
A9–A0
CLK
CKE
CS
RAS
CAS
WE
I/O15–I/O0
DQMU
DQML
A9–A0
CLK
CKE
CS
RAS
CAS
WE
I/O15–I/O0
DQMU
DQML