ATTINY4313-MU Atmel, ATTINY4313-MU Datasheet - Page 20
![IC MCU AVR 4K FLASH 20QFN](/photos/6/87/68751/313-20-qfn_sml.jpg)
ATTINY4313-MU
Manufacturer Part Number
ATTINY4313-MU
Description
IC MCU AVR 4K FLASH 20QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY4313-MU
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
18
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-VQFN Exposed Pad, 20-HVQFN, 20-SQFN, 20-DHVQFN
Processor Series
ATtiny
Core
AVR
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
SPI, USART, USI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
18
Number Of Timers
2
Operating Supply Voltage
3.3 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Temperature Range
- 40 C to + 85 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data Converters
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATTINY4313-MU
Manufacturer:
HITTITE
Quantity:
101
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5.3.7
20
ATtiny2313A/4313
Preventing EEPROM Corruption
The next code examples show assembly and C functions for reading the EEPROM. The exam-
ples assume that interrupts are controlled so that no interrupts will occur during execution of
these functions.
Note:
During periods of low V
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First,
a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Sec-
ondly, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can
be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal
BOD does not match the needed detection level, an external low V
be used. If a reset occurs while a write operation is in progress, the write operation will be com-
pleted provided that the power supply voltage is sufficient.
Assembly Code Example
C Code Example
EEPROM_read:
unsigned char EEPROM_read(unsigned char ucAddress)
{
}
; Wait for completion of previous write
sbic EECR,EEPE
rjmp EEPROM_read
; Set up address (r17) in address register
out EEARL, r17
; Start eeprom read by writing EERE
sbi EECR,EERE
; Read data from data register
in
ret
/* Wait for completion of previous write */
while(EECR & (1<<EEPE))
/* Set up address register */
EEARL = ucAddress;
/* Start eeprom read by writing EERE */
EECR |= (1<<EERE);
/* Return data from data register */
return EEDR;
1. See “Code Examples” on page 6.
;
r16,EEDR
(1)
CC
, the EEPROM data can be corrupted because the supply voltage is
(1)
CC
reset protection circuit can
8246A–AVR–11/09
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