HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 548
HD64F3337YCP16
Manufacturer Part Number
HD64F3337YCP16
Description
IC H8 MCU FLASH 60K 84PLCC
Manufacturer
Renesas Electronics America
Series
H8® H8/300r
Specifications of HD64F3337YCP16
Core Processor
H8/300
Core Size
8-Bit
Speed
16MHz
Connectivity
Host Interface, I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
84-PLCC
Package
84PLCC
Family Name
H8
Maximum Speed
16 MHz
Operating Supply Voltage
5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
74
Interface Type
HIF/I2C/SCI
On-chip Adc
8-chx10-bit
On-chip Dac
2-chx8-bit
Number Of Timers
3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD64F3337YCP16
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
HD64F3337YCP16V
Manufacturer:
COILMASTER
Quantity:
30 000
Company:
Part Number:
HD64F3337YCP16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 548 of 749
- Download datasheet (4Mb)
21.4
In the on-board programming modes, flash memory programming and erasing is performed by
software, using the CPU. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes can be made by
setting the PSU and ESU bits in FLMCR2, and the P, E, PV, and EV bits in FLMCR1.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM or external memory.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, EV, PV, E, and P bits in
21.4.1
Follow the procedure shown in the program/program-verify flowchart in figure 21.12 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 32 bytes at a
time.
For the wait times (x, y, z, , ,
control registers 1 and 2 (FLMCR1, FLMCR2) and the maximum number of writes (N), see Flash
Memory Characteristics in section 23, Electrical Characteristics.
Following the elapse of (x) s or more after the SWE bit is set to 1 in flash memory control
register 1 (FLMCR1), 32-byte program data is stored in the program data area and reprogram data
area, and the 32-byte data in the reprogram data area written consecutively to the write addresses.
The lower 8 bits of the first address written to must be H'00, H'20, H'40, H'60, H'80, H'A0, H'C0,
or H'E0. Thirty-two consecutive byte data transfers are performed. The program address and
program data are latched in the flash memory. A 32-byte data transfer must be performed even if
writing fewer than 32 bytes; in this case, H'FF data must be written to the extra addresses.
Next, the watchdog timer is set to prevent overprogramming in the event of program runaway, etc.
Set a value greater than (y + z +
program mode (program setup) is carried out by setting the PSU bit in FLMCR2, and after the
elapse of (y) s or more, the operating mode is switched to program mode by setting the P bit in
FLMCR1. The time during which the P bit is set is the flash memory programming time. Make a
program setting so that the time for one programming operation is within the range of (z) s.
516
2. Perform programming in the erased state. Do not perform additional programming on
Programming/Erasing Flash Memory
Program Mode
FLMCR1, and the ESU and PSU bits in FLMCR2, is executed by a program in flash
memory.
previously programmed addresses.
+ ) s as the WDT overflow period. After this, preparation for
after setting/clearing individual bits in flash memory
Related parts for HD64F3337YCP16
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
KIT STARTER FOR M16C/29
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8C/2D
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
R0K33062P STARTER KIT
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8C/23 E8A
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8C/25
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER H8S2456 SHARPE DSPLY
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8C38C
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8C35C
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R8CL3AC+LCD APPS
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR RX610
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR R32C/118
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT DEV RSK-R8C/26-29
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR SH7124
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT STARTER FOR H8SX/1622
Manufacturer:
Renesas Electronics America
Datasheet:
Part Number:
Description:
KIT DEV FOR SH7203
Manufacturer:
Renesas Electronics America
Datasheet: