ATTINY461-20PU Atmel, ATTINY461-20PU Datasheet - Page 175

• Manufacturer Part Number: ATTINY461-20PU
• Description: Microcontrollers (MCU) 4kB Flash 0.256kB EEPROM 16 I/O Pins
• Manufacturer: Atmel

Specifications of ATTINY461-20PU

• Processor Series: ATTINY4x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: 2-Wire/SPI/USI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 16
• Number Of Timers: 2
• Operating Supply Voltage: 4.5 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 11-ch x 10-bit
• Program Memory Type: Flash
• Program Memory Size: 4 KB
• Package / Case: PDIP-20
• Package: 20PDIP
• Device Core: AVR
• Family Name: ATtiny
• Maximum Speed: 20 MHz
• Ram Size: 256 Byte
• Operating Temperature: -40 to 85 °C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

18.6.2
2588E–AVR–08/10
Serial Programming Instruction set
Table 18-10. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
The instruction set is described in
Symbol
t
t
t
t
5. A: The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
WD_FLASH
WD_EEPROM
WD_ERASE
WD_FUSE
interface before the Flash write operation completes can result in incorrect
programming.
data together with the appropriate Write instruction. An EEPROM memory location is
first automatically erased before new data is written. If polling (RDY/BSY) is not used,
the user must wait at least t
In a chip erased device, no 0xFFs in the data file(s) need to be programmed.
B: The EEPROM array is programmed one page at a time. The Memory page is loaded
one byte at a time by supplying the 2 LSB of the address and data together with the
Load EEPROM Memory Page instruction. The EEPROM Memory Page is stored by
loading the Write EEPROM Memory Page Instruction with the 6 MSB of the address.
When using EEPROM page access only byte locations loaded with the Load EEPROM
Memory Page instruction is altered. The remaining locations remain unchanged. If poll-
ing (RDY/BSY) is not used, the used must wait at least t
next page (See
be programmed.
content at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
CC
power off.
Table
18-8). In a chip erased device, no 0xFF in the data file(s) need to
WD_EEPROM
Table 18-11 on page 176
before issuing the next byte. (See
Minimum Wait Delay
and
WD_EEPROM
4.5 ms
4.0 ms
9.0 ms
4.5 ms
Figure 18-2 on page
before issuing the
Table
18-10.)
177.
175