C8051F502-IMR Silicon Laboratories Inc, C8051F502-IMR Datasheet - Page 50

• Manufacturer Part Number: C8051F502-IMR
• Description: MCU 8-Bit C8051F50x 8051 CISC 64KB Flash 2.5V/3.3V/5V 32-Pin QFN EP T/R
• Manufacturer: Silicon Laboratories Inc

Specifications of C8051F502-IMR

• Package: 32QFN EP
• Device Core: 8051
• Family Name: C8051F50x
• Maximum Speed: 50 MHz
• Ram Size: 4.25 KB
• Program Memory Size: 64 KB
• Operating Supply Voltage: 2.5|3.3|5 V
• Data Bus Width: 8 Bit
• Program Memory Type: Flash
• Number Of Programmable I/os: 25
• Interface Type: I2C/SPI/UART
• On-chip Adc: 32-chx12-bit
• Operating Temperature: -40 to 125 °C
• Number Of Timers: 4

C8051F50x/F51x
Table 5.10. Temperature Sensor Electrical Characteristics
VDDA
Table 5.11. Voltage Reference Electrical Characteristics
VDDA
50
Linearity
Slope
Slope Error*
Offset
Offset Error*
Power Supply Current
Tracking Time
*Note: Represents one standard deviation from the mean.
Internal Reference (REFBE = 1)
Output Voltage
VREF Short-Circuit Current
VREF Temperature 
Coefficient
Power Consumption
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
Power Supply Rejection
External Reference (REFBE = 0)
Input Voltage Range
Input Current
Power Specifications
Reference Bias Generator
= 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
= 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
Parameter
Parameter
25 °C ambient (REFLV = 0)
25 °C ambient (REFLV = 1), V
Internal
Load = 0 to 200 µA to AGND
4.7 µF and 0.1 µF bypass
0.1 µF bypass
Sample Rate = 200 ksps; VREF = 1.5 V
REFBE = 1 or TEMPE = 1
Temp = 0 °C
Temp = 0 °C
Conditions
Conditions
Rev. 1.2
DD
= 2.6 V
Min
12
—
—
—
—
—
—
1.45
2.15
Min
1.5
—
—
—
—
—
—
—
—
—
±100
±0.1
3.33
Typ
856
±14
21
—
1.50
2.20
Typ
1.5
1.3
2.2
33
30
46
21
—
5
3
Max
—
—
—
—
—
—
—
V
Max
1.55
2.25
10
50
40
—
—
—
—
—
DDA
—
mV/°C
µV/°C
Units
ppm/°C
µV/µA
mV
mV
Units
mV/V
µA
°C
µs
mA
ms
µA
µA
µA
µs
V
V