s71ws512ne0bfwzz Meet Spansion Inc., s71ws512ne0bfwzz Datasheet - Page 11

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s71ws512ne0bfwzz

Manufacturer Part Number
s71ws512ne0bfwzz
Description
Stacked Multi-chip Product Mcp Flash Memoy And Psram Cmos 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory And Pseudo-static Ram
Manufacturer
Meet Spansion Inc.
Datasheet
June 28, 2004 S71WS512NE0BFWZZ_00_A1
S
71
W S
The order number (Valid Combination) is formed by the following:
Valid Combinations list configurations planned to be supported in volume for this device.
Consult the local sales office to confirm availability of specific valid combinations and to
check on newly released combinations.
512
N E
A d v a n c e
0
B
F W ZZ
I n f o r m a t i o n
Valid Combinations
0
PACKING TYPE
0
2
3
Additional ordering options
See Product Selector Guide
TEMPERATURE (and RELIABILITY) GRADE
E
W
I
PACKAGE MATERIAL SET (BGA Package Type)
A
F
PACKAGE TYPE
B
CHIP CONTENTS—2
0
CHIP CONTENTS—1
8
A
B
C
E
Spansion FLASH MEMORY PROCESS TECHNOLOGY
(Highest-density Flash described in Characters 4-8)
N
BASE NOR FLASH DENSITY
512
BASE NOR FLASH CORE VOLTAGE
S
BASE NOR FLASH INTERFACE and SIMULTANEOUS READ/
WRITE
W
PRODUCT FAMILY
71
PREFIX
S
= Tray
= 7” Tape & Reel
= 13” Tape & Reel
= Engineering Samples
= Wireless (-25
= Industrial (-40
= Standard (Pb-free compliant) Package
= Lead (Pb)-free Package
= BGA Package
= No second content
= 8 Mb
= 16 Mb
= 32 Mb
= 64 Mb
= 256 Mb (two 128Mb)
= 110 nm MirrorBit
= two S29WS256N
= 1.8-volt V
= Simultaneous Read/Write, Burst
= Flash Base + xRAM.
= Spansion
CC
°
C to +85
°
C to +85
TM
Technology
°
C)
°
C)
11

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