s71ws512ne0bfwzz Meet Spansion Inc., s71ws512ne0bfwzz Datasheet - Page 56

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s71ws512ne0bfwzz

Manufacturer Part Number
s71ws512ne0bfwzz
Description
Stacked Multi-chip Product Mcp Flash Memoy And Psram Cmos 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory And Pseudo-static Ram
Manufacturer
Meet Spansion Inc.
Datasheet
56
Unlock Command 1
Unlock Command 2
Write Buffer Load
Specify the Number of Program
Locations
Load 1st data word
Load next data word
...
Load last data word
Write Buffer Program Confirm
Device goes busy
Status monitoring through DQ
pins (Perform Data Bar Polling on
the Last Loaded Address)
Write Buffer Programming Command Sequence
Sequence
When the Embedded Program algorithm is complete, the device then returns to
the read mode and addresses are no longer latched. The system can determine
the status of the program operation by using DQ7 or DQ6. Refer to the Write Op-
eration Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm
are ignored. Note that the SecSi Sector, autoselect, and CFI functions are
unavailable when a program operation is in progress. Note that a hard-
ware reset immediately terminates the program operation. The program
command sequence should be reinitiated once the device has returned to the
read mode, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries. Program-
ming to the same word address multiple times without intervening erases is
limited. For such application requirements, please contact your local Spansion
representative. Any word cannot be programmed from “0” back to a “1.”
Attempting to do so may cause the device to set DQ5 = 1, or cause the DQ7 and
DQ6 status bits to indicate the operation was successful. However, a succeeding
read will show that the data is still “0.” Only erase operations can convert a “0”
to a “1.”
Write Buffer Programming Sequence allows for faster programming compared to
the standard Program Command Sequence. Write Buffer Programming allows the
system to write 32 words in one programming operation. See the
Programming
S29WSxxxN MirrorBit™ Flash Family For Multi-chip Products (MCP) S71WS512NE0BFWZZ_00_ A1 June 28, 2004
Operation" section for the program command sequence.
Table 18. Write Buffer Command Sequence
Starting Address
Starting Address
Starting Address
Sector Address
Write Buffer
Write Buffer
Location
Location
Address
555
2AA
...
A d v a n c e
Program Data
Program Data
Program Data
Word Count
0025h
0029h
00AA
0055
Data
...
I n f o r m a t i o n
Number of locations to program minus 1 (must be
boundaries, but do not have to be loaded in any
This command must follow the last write buffer
All addresses must be within write-buffer-page
location loaded, or the operation will ABORT
Not required in the Unlock Bypass mode
Same as above
Same as above
Same as above
Same as above
32 - 1 = 31)
"Write Buffer
Comment
order

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