HD6433640 HITACHI [Hitachi Semiconductor], HD6433640 Datasheet - Page 174

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HD6433640

Manufacturer Part Number
HD6433640
Description
H8/3644 Series Hardware Manual
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

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6. Do not apply 12 V to the FV
ø
V
V
(boot mode)
V
(user program
mode)
RES
CC
PP
PP
To prevent erroneous programming or erasing due to program runaway, etc., apply 12 V to the
FV
overerasing occurs due to program runaway, etc., the memory cells may not operate normally.
A system configuration in which a high level is constantly applied to the FV
avoided. Also, while a high level is applied to the FV
activated to prevent overprogramming or overerasing due to program runaway, etc.
PP
Period during which flash memory access
is prohibited and V
3.0 to 5.5 V
V
pin only when programming or erasing flash memory. If overprogramming or
CC
V
V
+ 2 V to 11.4 V
CC
CC
V
V
t
12
12
OSC1
0.6 V
0.6 V
Figure 6.25 V
PP
flag set/clear period
PP
0 s min.
pin during normal operation.
PP
Power-On and Cut-Off Timing
0 s min.
Timing of boot
program branch
to RAM space
PP
pin, the watchdog timer should be
Min. 10 ø cycles
(When RES is low)
0 s min.
PP
pin should be
0 to V
0 to V
CC
CC
165
V
V

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