ATMEGA325-16AJ ATMEL [ATMEL Corporation], ATMEGA325-16AJ Datasheet - Page 19

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ATMEGA325-16AJ

Manufacturer Part Number
ATMEGA325-16AJ
Description
8-bit Microcontroller with In-System Programmable Flash
Manufacturer
ATMEL [ATMEL Corporation]
Datasheet
EEPROM Data Memory
EEPROM Read/Write Access
2570A–AVR–09/04
Figure 11. On-chip Data SRAM Access Cycles
The ATmega325/3250/645/6450 contains 1/2K bytes of data EEPROM memory. It is
organized as a separate data space, in which single bytes can be read and written. The
EEPROM has an endurance of at least 100,000 write/erase cycles. The access
between the EEPROM and the CPU is described in the following, specifying the
EEPROM Address Registers, the EEPROM Data Register, and the EEPROM Control
Register.
For a detailed description of SPI, JTAG and Parallel data downloading to the EEPROM,
see page 270, page 274, and page 259 respectively.
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in Table 2. A self-timing function, how-
ever, lets the user software detect when the next byte can be written. If the user code
contains instructions that write the EEPROM, some precautions must be taken. In
heavily filtered power supplies, V
causes the device for some period of time to run at a voltage lower than specified as
minimum for the clock frequency used. See “Preventing EEPROM Corruption” on page
23. for details on how to avoid problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be fol-
lowed. Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next
instruction is executed. When the EEPROM is written, the CPU is halted for two clock
cycles before the next instruction is executed.
Address
clk
Data
Data
WR
CPU
RD
Compute Address
T1
Memory Access Instruction
CC
is likely to rise or fall slowly on power-up/down. This
ATmega325/3250/645/6450
Address valid
T2
Next Instruction
T3
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