F272-BAG-T-TR STMicroelectronics, F272-BAG-T-TR Datasheet - Page 129

• Manufacturer Part Number: F272-BAG-T-TR
• Description: MCU 16BIT 256K FLASH 144-TQFP
• Manufacturer: STMicroelectronics
• Series: ST10r

Specifications of F272-BAG-T-TR

• Core Processor: ST10
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 111
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 20K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 144-TQFP, 144-VQFP
• Processor Series: ST10F27x
• Core: ST10
• Data Bus Width: 16 bit
• Data Ram Size: 12 KB
• Interface Type: ASC, CAN, I2C, SSC
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 111
• Number Of Timers: 4
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 24 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: No

ST10F272B/ST10F272E
24.2
Table 60.
1. The value of the V
2. For details on operating conditions concerning the usage of A/D Converter refer to
24.3
limit (up to 6.0 Volt) for a maximum of 100 hours over the global 300000 hours, representing the lifetime of the device
(about 30 years). On the other hand, it is possible to exceed the lower limit (down to 4.0 Volt) whenever RTC and 32kHz
on-chip oscillator amplifier are turned off (only Stand-by RAM powered through VSTBY pin in Stand-by mode). When
VSTBY voltage is lower than main VDD, the input section of VSTBY/EA pin can generate a spurious static consumption on
VDD power supply (in the range of tenth of µA).
Symbol
V
V
V
AREF
STBY
T
T
DD
A
J
Recommended operating conditions
Recommended operating conditions
Power considerations
The average chip-junction temperature, T
following equation:
T
Where:
T
Θ
P
P
P
Most of the time for the applications P
P
and/or memories.
An approximate relationship between P
P
Therefore (solving equations 1 and 2):
K = P
Where:
K is a constant for the particular part, which may be determined from equation (3) by
measuring P
may be obtained by solving equations (1) and (2) iteratively for any value of T
A
JA
J
D
INT
I/O
I/O
D
Operating supply voltage
Operationg stand-by supply voltage
Operating analog reference voltage
Ambient temperature under bias
Junction temperature under bias
= T
is the Ambient Temperature in ° C,
is the sum of P
= K / (T
is the Package Junction-to-Ambient Thermal Resistance, in ° C/W,
represents the Power Dissipation on Input and Output Pins; User Determined.
may be significant if the device is configured to drive continuously external modules
is the product of I
STBY
D
A
x (T
+ (P
voltage is specified in the range 4.5 - 5.5 Volt. Nevertheless, it is acceptable to exceed the upper
J
A
D
+ 273°C) (2)
D
+ 273°C) + Θ
x Θ
(at equilibrium) for a known T
JA
INT
) (1)
and P
DD
Parameter
and V
JA
I/O
x P
(P
DD
D
D
2
, expressed in Watt. This is the Chip Internal Power,
(2)
(1)
= P
(3)
I/O
INT
D
< P
J
and T
, in degrees Celsius, may be calculated using the
+ P
A.
INT
I/O
Using this value of K, the values of P
J
and may be neglected. On the other hand,
),
(if P
I/O
is neglected) is given by:
Section
24.7.
Min
-40
-40
4.5
4.5
Electrical characteristics
Value
+125
+150
Max
5.5
5.5
A
.
D
129/182
and T
Unit
°C
°C
V
V
J