F272-BAG-T-TR STMicroelectronics, F272-BAG-T-TR Datasheet - Page 29

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F272-BAG-T-TR

Manufacturer Part Number
F272-BAG-T-TR
Description
MCU 16BIT 256K FLASH 144-TQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet

Specifications of F272-BAG-T-TR

Core Processor
ST10
Core Size
16-Bit
Speed
40MHz
Connectivity
ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-TQFP, 144-VQFP
Processor Series
ST10F27x
Core
ST10
Data Bus Width
16 bit
Data Ram Size
12 KB
Interface Type
ASC, CAN, I2C, SSC
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
111
Number Of Timers
4
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 24 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
No

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
F272-BAG-T-TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
F272-BAG-T-TR
Manufacturer:
ST
0
ST10F272B/ST10F272E
5.2.3
Note:
When Bootstrap mode is entered:
In Bootstrap mode, by default ROMS1 = 0, so the first 32KBytes of IFlash are mapped in
segment 0.
Example:
In default configuration, to program address 0, user must put the value 01'0000h in the
FARL and FARH registers, but to verify the content of the address 0 a read to 00'0000h must
be performed.
Next
addressed by the CPU.
Table 6.
Low power mode
The Flash module is automatically switched off executing PWRDN instruction. The
consumption is drastically reduced, but exiting this state can require a long time (t
Recovery time from Power Down mode for the Flash modules is anyway shorter than the
main oscillator start-up time. To avoid any problem in restarting to fetch code from the Flash,
it is important to size properly the external circuit on RPD pin.
PWRDN instruction must not be executed while a Flash program/erase operation is in
progress.
FCR1-0
FDR1-0
FAR
FER
FNVWPIR
FNVAPR0
FNVAPR1
XFVTAUR0
Name
Test-Flash is seen and available for code fetches (address 00’0000h)
User I-Flash is only available for read and write accesses
Write accesses must be made with addresses starting in segment 1 from 01'0000h,
whatever ROMS1 bit in SYSCON value
Read accesses are made in segment 0 or in segment 1 depending of ROMS1 value.
Table 6
Control register interface
shows the Control Register interface composition: this set of registers can be
Flash Control Registers 1-0
Flash Data Registers 1-0
Flash Address Registers
Flash Error Register
Flash Non Volatile Protection I
Register
Flash Non Volatile Access Protection
Register 0
Flash Non Volatile Access Protection
Register 1
XBus Flash Volatile Temporary
Access Unprotection Register 0
Description
0x0008 0000 - 0x0008 0007
0x0008 0008 - 0x0008 000F
0x0008 0010 - 0x0008 0013
0x0008 0014 - 0x0008 0015
0x0008 DFB0 - 0x0008
DFB1
0x0008 DFB8 - 0x0008
DFB9
0x0008 DFBC - 0x0008
DFBF
0x0000 EB50 - 0x0000 EB51 2 byte
Addresses
Internal Flash memory
8 byte
8 byte
4 byte
2 byte
2 byte
2 byte
4 byte
Size
PD
).
16-bit
29/182
Bus
size

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