F272-BAG-T-TR STMicroelectronics, F272-BAG-T-TR Datasheet - Page 136

• Manufacturer Part Number: F272-BAG-T-TR
• Description: MCU 16BIT 256K FLASH 144-TQFP
• Manufacturer: STMicroelectronics
• Series: ST10r

Specifications of F272-BAG-T-TR

• Core Processor: ST10
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 111
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 20K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 144-TQFP, 144-VQFP
• Processor Series: ST10F27x
• Core: ST10
• Data Bus Width: 16 bit
• Data Ram Size: 12 KB
• Interface Type: ASC, CAN, I2C, SSC
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 111
• Number Of Timers: 4
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 24 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: No

Electrical characteristics
24.6
Table 64.
1. The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).
2. Word and Double Word Programming times are provided as average values derived from a full sector programming time:
3. Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the Bank). As
4. Not 100% tested, guaranteed by Design Characterization.
136/182
Word Program (32-bit)
Double Word Program (64-bit)
Bank 0 Program (256K)
(Double Word Program)
Sector Erase (8K)
Sector Erase (32K)
Sector Erase (64K)
Bank 0 Erase (256K)
Recovery from Power-Down (t
Program Suspend Latency
Erase Suspend Latency
Erase Suspend Request Rate
Set Protection
absolute value of a Word or Double Word Programming time could be longer than the average value.
ST10F272 implements only one bank, the Bank Erase operation is equivalent to Module and Chip Erase operations.
Parameter
Flash characteristics
V
Flash characteristics
(4)
DD
= 5 V ± 10%, V
(3)
(2)
(4)
(4)
(2))
PD
(4)
)
SS
0 cycles
T
= 0 V
Typical
A
= 25°C
1.6
0.6
0.5
1.1
0.8
1.7
1.3
5.6
4.0
35
60
20
40
–
–
–
(1)
0 cycles
13.6
11.9
150
2.0
0.9
0.8
2.0
1.8
3.7
3.3
80
40
10
30
20
90
T
Maximum
A
(1)
= 125°C
100k cycles
19.2
17.5
290
570
300
3.9
1.0
0.9
2.7
2.5
5.1
4.7
20
40
10
30
Unit
ms
µs
µs
µs
µs
µs
µs
s
s
s
s
s
–
–
–
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
not preprogrammed
preprogrammed
(4)
Min delay between 2
requests
ST10F272B/ST10F272E
Notes