D12312SVTEBL25 Renesas Electronics America, D12312SVTEBL25 Datasheet - Page 662

IC H8S MCU ROMLESS 100-QFP

D12312SVTEBL25

Manufacturer Part Number
D12312SVTEBL25
Description
IC H8S MCU ROMLESS 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of D12312SVTEBL25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412312SVTEBL25
HD6412312SVTEBL25
Section 17 ROM
Rev.7.00 Feb. 14, 2007 page 628 of 1108
REJ09B0089-0700
φ
V
FWE
MD2 to MD0
RES
SWE bit
Notes: 1. When entering boot mode or making a transition from boot mode to another mode, mode switching must be
CC
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations prohibited)
2. When making a transition from boot mode to another mode, a mode programming setup time t
3. See section 20.3.6, Flash Memory Characteristics.
carried out by means of RES input. The state of ports with multiplexed address functions and bus control
output pins (AS, RD, WR) will change during this switchover interval (the interv al during which the RES pin
input is low), and therefore these pins should not be used as output signals during this time.
ns is necessary with respect to RES clearance timing.
(Example: Boot Mode → User Mode ↔ User Program Mode)
t
OSC1
Mode
change
SWE
set
t
MDS
t
MDS
*1
Figure 17.32 Mode Transition Timing
Boot
mode
*3
SWE
cleared
Mode
change
t
RESW
Min 0 μs
t
MDS
*1
*2
User
mode
User program mode
User
mode
User program
mode
MDS
(min) of 200

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