D12312SVTEBL25 Renesas Electronics America, D12312SVTEBL25 Datasheet - Page 857

IC H8S MCU ROMLESS 100-QFP

D12312SVTEBL25

Manufacturer Part Number
D12312SVTEBL25
Description
IC H8S MCU ROMLESS 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of D12312SVTEBL25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412312SVTEBL25
HD6412312SVTEBL25
(2) Control Signal Timing
Table 20.5 Control Signal Timing
Condition A: V
Condition B: V
Item
RES setup time
RES pulse width
NMI setup time
NMI hold time
NMI pulse width (in recovery
from software standby mode)
IRQ setup time
IRQ hold time
IRQ pulse width (in recovery
from software standby mode)
0 V, φ = 2 MHz to 20 MHz, T
T
0 V, φ = 2 MHz to 25 MHz, T
T
a
a
CC
CC
= –40°C to 85°C (wide-range specifications)
= –40°C to 85°C (wide-range specifications)
= 2.7 V to 3.6 V, AV
= 3.0 V to 3.6 V, AV
Symbol
t
t
t
t
t
t
t
t
RESS
RESW
NMIS
NMIH
NMIW
IRQS
IRQH
IRQW
CC
CC
= 2.7 V to 3.6 V, V
= 3.0 V to 3.6 V, V
a
a
Min
200
20
150
10
200
150
10
200
= –20°C to 75°C (regular specifications),
= –20°C to 75°C (regular specifications),
Condition A
Max
Rev.7.00 Feb. 14, 2007 page 823 of 1108
Section 20 Electrical Characteristics
ref
ref
Min
200
20
150
10
200
150
10
200
Condition B
= 2.7 V to AV
= 3.0 V to AV
Max
Unit
ns
t
ns
ns
CC
CC
cyc
REJ09B0089-0700
, V
, V
SS
SS
Test
Conditions
Figure 20.4
Figure 20.5
= AV
= AV
SS
SS
=
=

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