D12312SVTEBL25 Renesas Electronics America, D12312SVTEBL25 Datasheet - Page 785

• Manufacturer Part Number: D12312SVTEBL25
• Description: IC H8S MCU ROMLESS 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of D12312SVTEBL25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Type: ROMless
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Other names: HD6412312SVTEBL25; HD6412312SVTEBL25

17.28.4 Auto-Program Mode
(1) In auto-program mode, programming is in 128-byte units. That is, 128 bytes of data are
(2) Even in the programming of less than 128 bytes, 128 bytes of data must be transferred. H'FF
(3) Set the low seven bits of the address to be transferred to low level. Inputting an invalid address
(4) The memory address is transferred in the 2nd cycle. Do not transfer addresses in the 3rd or
(5) Do not issue commands while programming is in progress.
(6) When programming, execute automatic programming once for each 128-byte block of
(7) To confirm the end of automatic programming, check the signal on the I/O
(8) Status-polling information on the I/O
For the AC characteristics in auto-program mode, see section 17.29.2, AC Characteristics and
Timing in PROM Mode.
17.28.5 Auto-Erase Mode
(1) Auto-erase mode only supports erasing of the entire memory.
(2) Do not perform command writing during auto erasing is in progress.
(3) To confirm the end of automatic erasing, check the signal on the I/O
(4) Status polling information on the I/O
For the AC characteristics in auto-erase mode, see section 17.29.2, AC Characteristics and Timing
in PROM Mode.
transferred in succession.
should be written to those addresses that are unnecessarily written to.
will result in a programming error, although processing will proceed to the memory-
programming operation.
later cycles.
addresses. Programming the block at an address where programming has already been
performed is not possible.
in the status-read mode is also possible (status polling of the I/O
status of automatic programming).
written. As long as no command is written, the information is made readable by setting CE and
OE for enabling.
status-read mode is also possible (status polling of the I/O
of automatic erasure).
As long as no command is written, the information is made readable by setting CE and OE for
enabling.
6
6
and I/O
and I/O
7
7
pins is retained until the next command writing.
pins is retained until the next command is
Rev.7.00 Feb. 14, 2007 page 751 of 1108
7
pin is used to check the end status
7
pin is used to check the end
6
pin. Confirmation in the
6
pin. Confirmation
REJ09B0089-0700
Section 17 ROM