D12312SVTEBL25 Renesas Electronics America, D12312SVTEBL25 Datasheet - Page 816

IC H8S MCU ROMLESS 100-QFP

D12312SVTEBL25

Manufacturer Part Number
D12312SVTEBL25
Description
IC H8S MCU ROMLESS 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of D12312SVTEBL25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412312SVTEBL25
HD6412312SVTEBL25
Section 17 ROM
Table 17.66 AC Characteristics in Transition from Memory Read Mode to Others
Condition: V
Code
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Programming pulse width
WE rise time
WE fall time
Rev.7.00 Feb. 14, 2007 page 782 of 1108
REJ09B0089-0700
I/O7-0
A18-0
Figure 17.89 Timing at Transition from Memory Read Mode to Other Modes
WE
OE
CE
Note : WE and OE should not be enabled simultaneously.
CC
= 3.3 V ± 0.3 V, V
Memory Read Mode
Address Stable
SS
= 0 V, T
t
t
t
t
t
t
t
Symbol
t
nxtc
ceh
ces
dh
ds
wep
r
f
a
= 25˚C ± 5˚C
t
nxtc
Min
20
0
0
50
50
70
Other Mode Command Write
t
ces
tf
Max
30
30
t
wep
t
ds
t
ceh
tr
t
Unit
μs
ns
ns
ns
ns
ns
ns
ns
dh

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