MC68HC916Y3CFT16 Freescale Semiconductor, MC68HC916Y3CFT16 Datasheet - Page 204

no-image

MC68HC916Y3CFT16

Manufacturer Part Number
MC68HC916Y3CFT16
Description
IC MCU 96K FLASH 16MHZ 160-QFP
Manufacturer
Freescale Semiconductor
Series
HC16r
Datasheet

Specifications of MC68HC916Y3CFT16

Core Processor
CPU16
Core Size
16-Bit
Speed
16MHz
Connectivity
EBI/EMI, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
60
Program Memory Size
96KB (96K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
160-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
9.4.5 Program/Erase Operation
9-4
MOTOROLA
Entire Array
NOTES:
An unprogrammed TPUFLASH bit has a logic state of one. A bit must be programmed
to change its state from one to zero. Erasing a bit returns it to a logic state of one. Pro-
gramming or erasing the TPUFLASH array requires a series of control register writes
and a write to an array address. The same procedure is used to program control reg-
isters that contain TPUFLASH bits. Programming is restricted to a single byte or
aligned word at a time. Long words and misaligned words cannot be programmed in
a single operation. Erasing is performed by bulk or by block. In block erase mode, only
one selected block in the array is erased. The entire TPUFLASH array and the shadow
register bits are erased at the same time in bulk erase mode. The TPUFLASH must
be completely erased before programming final data values. Bulk/Block erase mode
is determined by the address written when erasing the array. Refer to Table 9-2 for
the address bit patterns corresponding to specific TPUFLASH blocks.
Refer to APPENDIX A ELECTRICAL CHARACTERISTICS for information on pro-
gramming and erasing specifications for the TPUFLASH module.
Block
1. The TPUFLASH base address high and low registers (TFBAH and TFBAL) specify ADDR[23:11] of the block
2. These address bits are “don’t cares” when specifying the block to be erased.
3. Erasing the entire array also erases the TPUFLASH control register shadow bits.
0
1
2
3
4
5
6
7
to be erased.
3
Reserved
Addresses Affected
In order to program the array, programming voltage must be applied
to the V
or damage to the TPUFLASH module can occur.
Table 9-2 TPUFLASH Erase Operation Address Ranges
$0000 - $007F
$0100 - $017F
$0180 - $01FF
$0200 - $02FF
$0300 - $03FF
$0400 - $05FF
$0600 - $07FF
$0600 - $07FF
$0080 - $0100
FPE1K
pin. V
TPU FLASH EEPROM MODULE
TFBAH/TFBAL
ADDR[23:11]
FPE1K
Address Bits Used to Specify Block for Erasure
(V
1
DD
Note
ADDR[10:6]
0.5 V) must be applied at all times
X
2
A5
1
1
1
1
1
1
1
1
1
0
A4
X
X
0
0
0
0
1
1
1
0
A3
X
X
0
0
1
1
0
0
1
1
MC68HC16Y3/916Y3
USER’S MANUAL
A2
X
X
0
1
0
1
0
1
0
1
A1
X
2
A0
X
2

Related parts for MC68HC916Y3CFT16