ATTINY84V-10PU Atmel, ATTINY84V-10PU Datasheet - Page 175
![no-image](/images/manufacturer_photos/0/0/78/atmel_sml.jpg)
ATTINY84V-10PU
Manufacturer Part Number
ATTINY84V-10PU
Description
AVR MCU, 8K FLASH, 512B RAM, 512B EE
Manufacturer
Atmel
Datasheet
1.ATTINY84V-10PU.pdf
(233 pages)
Specifications of ATTINY84V-10PU
Controller Family/series
AVR Tiny
No. Of I/o's
12
Eeprom Memory Size
512Byte
Ram Memory Size
1KB
Cpu Speed
10MHz
Core Size
8bit
Program Memory Size
8KB
Oscillator Type
External, Internal
Processor Series
ATTINY8x
Core
AVR8
Data Bus Width
8 bit
Program Memory Type
Flash
Data Ram Size
512 B
Interface Type
SPI
Maximum Clock Frequency
10 MHz
Number Of Programmable I/os
12
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Package / Case
PDIP-14
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATTINY84V-10PU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
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21.8.5
21.8.6
21.8.7
21.8.8
21.8.9
21.8.10
8006F–AVR–02/07
Programming the EEPROM
Reading the Flash
Reading the EEPROM
Programming and Reading the Fuse and Lock Bits
Reading the Signature Bytes and Calibration Byte
Power-off sequence
The EEPROM is organized in pages, see
EEPROM, the data is latched into a page buffer. This allows one page of data to be pro-
grammed simultaneously. The programming algorithm for the EEPROM Data memory is as
follows (refer to
1. Load Command “Write EEPROM”.
2. Load EEPROM Page Buffer.
3. Program EEPROM Page. Wait after Instr. 2 until SDO goes high for the “Page Program-
4. Repeat 2 through 3 until the entire EEPROM is programmed or until all data has been
5. End Page Programming by Loading Command “No Operation”.
The algorithm for reading the Flash memory is as follows (refer to
1. Load Command "Read Flash".
2. Read Flash Low and High Bytes. The contents at the selected address are available at
The algorithm for reading the EEPROM memory is as follows (refer to
176):
1. Load Command “Read EEPROM”.
2. Read EEPROM Byte. The contents at the selected address are available at serial output
The algorithms for programming and reading the Fuse Low/High bits and Lock bits are shown in
Table 21-15 on page
The algorithms for reading the Signature bytes and Calibration byte are shown in
page
Set SCI to “0”. Set RESET to “1”. Turn V
ming” cycle to finish.
programmed.
serial output SDO.
SDO.
176.
Table 21-15 on page
176.
176):
CC
power off.
Table 22-7 on page
185. When programming the
Table 21-15 on page
ATtiny24/44/84
Table 21-15 on page
Table 21-15 on
176):
175
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