NP5Q128A13ESFC0E Micron Technology Inc, NP5Q128A13ESFC0E Datasheet - Page 33
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NP5Q128A13ESFC0E
Manufacturer Part Number
NP5Q128A13ESFC0E
Description
Manufacturer
Micron Technology Inc
Datasheet
1.NP5Q128A13ESFC0E.pdf
(56 pages)
Specifications of NP5Q128A13ESFC0E
Lead Free Status / RoHS Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NP5Q128A13ESFC0E
Manufacturer:
LATTICE
Quantity:
101
6.8
Dual output fast read (DOFR)
The dual output fast read (DOFR) instruction is very similar to the read data bytes at higher
speed (FAST_READ) instruction, except that the data are shifted out on two pins (pin DQ0
and pin DQ1) instead of only one. Outputting the data on two pins instead of one doubles
the data transfer bandwidth compared to the read data bytes at higher speed (FAST_READ)
instruction.
The device is first selected by driving Chip Select (S) Low. The instruction code for the dual
output fast read instruction is followed by a 3-byte address A[23:0] and a dummy byte, each
bit being latched-in during the rising edge of Serial Clock (C). Then the memory contents, at
that address, are shifted out on DQ0 and DQ1 at a maximum frequency f
edge of Serial Clock (C).
The instruction sequence is shown in
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out on DQ0 and DQ1. The whole
memory can, therefore, be read with a single dual output fast read (DOFR) instruction.
When the highest address is reached, the address counter rolls over to 00 0000h, so that
the read sequence can be continued indefinitely.
Figure 13. Dual output fast read instruction sequence
DQ0
DQ0
DQ1
DQ1
C
S
C
S
Mode 3
Mode 2
32 33 34
Dummy byte
0
35
1
36 37 38 39 40 41 42 43 44 45 46
2
Instruction
High Impedance
3
4
MSB
5
6
7
DATA OUT 1
Figure
6
4
5
7
2
3
23 22 21
8
0
1
13.
MSB
9 10
24-bit address
6
7
DATA OUT 2 DATA OUT 3
4
5
2
3
3
28 29 30 31
0
1
47
2
MSB
(1)
6
7
1
4
5
0
2
3
0
1
MSB
6
7
DATA OUT n
4
5
C
, during the falling
2
3
0
1
MSB
ai13574b
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