NP5Q128A13ESFC0E Micron Technology Inc, NP5Q128A13ESFC0E Datasheet - Page 46

• Manufacturer Part Number: NP5Q128A13ESFC0E
• Manufacturer: Micron Technology Inc

Specifications of NP5Q128A13ESFC0E

• Lead Free Status / RoHS Status: Supplier Unconfirmed

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DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow are derived from tests performed under the measurement conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 11.
Omneo™ P5Q PCM endurance is different than traditional non-volatile memory. For PCM a
“write cycle” is defined as any time a bit changes within a 32-byte page.
Table 12.
Table 13.
Figure 21. AC measurement I/O waveform
Write Cycle
Symbol
Parameter
Symbol
V
T
T
C
CC
A
A
L
Supply voltage
Ambient operating temperature (66MHz)
Ambient operating temperature (33MHz)
Load capacitance
Input rise and fall times
Input pulse voltages
Input timing reference voltages
Output timing reference voltages
Operating conditions
AC measurement conditions
Endurance Specification
Main Block
Parameter Block
0.8V CC
0.2V CC
Input levels
Condition
Parameter
Parameter
1,000,000
1,000,000
Min
timing reference levels
32-Byte Page
Cycles per
Units
Input and output
0.2V
0.3V
Min
CC
CC
Min
2.7
-30
V
0
CC
30
to 0.8V
to 0.7V
0.7V CC
0.5V CC
0.3V CC
AI07455
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Notes
Max
Typ
1
5
CC
CC
Write Cycle
Parameter
Max
+85
3.6
70
Unit
pF
ns
V
V
V
Unit
°C
°C
V