NP5Q128A13ESFC0E Micron Technology Inc, NP5Q128A13ESFC0E Datasheet - Page 50

• Manufacturer Part Number: NP5Q128A13ESFC0E
• Manufacturer: Micron Technology Inc

Specifications of NP5Q128A13ESFC0E

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Table 16.
1. Preliminary data.
2. Typical values given for T
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
7. When using the page program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
50/56
Symbol
t
PP
sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 64).
t
t
CH
t
SE
BE
W
(7)
+ t
CL
must be greater than or equal to 1/ f
Alt.
AC characteristics
Figure 22. Serial input timing
Write status register cycle time
Page program cycle time (64 bytes)
(Legacy Program & Bit-alterable Write)
Page program cycle time (64 bytes)
(Program on all 1s)
Sector erase cycle time
Bulk erase cycle time
S
C
DQ0
DQ1
tCHSL
A
= 25° C @ nominal V
Test conditions specified in
tDVCH
(1)
(continued)
High Impedance
Parameter
MSB IN
C
.
tSLCH
CC
.
tCHDX
Table 11
and
tCLCH
Table 13
tCHSH
Min
LSB IN
Typ
200
120
400
71
50
(2)
tCHCL
tSHSL
tSHCH
Max
350
800
360
280
100
AI13728
Unit
ms
µs
µs
s