NP5Q128A13ESFC0E Micron Technology Inc, NP5Q128A13ESFC0E Datasheet - Page 7

• Manufacturer Part Number: NP5Q128A13ESFC0E
• Manufacturer: Micron Technology Inc

Specifications of NP5Q128A13ESFC0E

• Lead Free Status / RoHS Status: Supplier Unconfirmed

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Product Description
The Omneo™ P5Q PCM s a 128-Mbit (16 Mb x 8) SPI phase change memory, with
advanced write protection mechanisms, accessed by a high speed SPI-compatible bus.
Omneo™ P5Q PCM product supports four new, high-performance dual and quad
input/output instructions:
These new instructions double or quadruple the transfer bandwidth for read and program
operations.
The memory can be programmed 1 to 64 bytes at a time, using the page program, dual
input fast program and quad input fast program instructions.
The memory is organized as 128 sectors that are further divided into 1,024 pages each
(131,072 pages in total).
For compatibility with flash memory devices, Omneo™ P5Q PCM supports sector erase
(128-Kbyte sector) and bulk erase instructions.
It can be write protected by software using a mix of volatile and non-volatile protection
features, depending on the application needs. The protection granularity is of 128 Kbytes
(sector granularity).
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Dual output fast read (DOFR) instruction used to read data at up to 66 MHz by
using both DQ0 and DQ1 pins as outputs
Quad output fast read (QOFR) instruction used to read data at up to 50 MHz by
using DQ0, DQ1, DQ2(W) and DQ3(HOLD) pins as outputs
Dual input fast program (DIFP) instruction used to program data at up to 66 MHz
by using both DQ0 and DQ1 pins as inputs
Quad input fast program (QIFP) instruction used to program data at up to 50 MHz
by using DQ0, DQ1, DQ2(W) and DQ3(HOLD) pins as inputs
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