N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 128

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

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Write NV Configuration Register
The Write Non Volatile Configuration register (WRNVCR) instruction allows new values to
be written to the Non Volatile Configuration register. Before it can be accepted, a write
enable (WREN) instruction must previously have been executed.
Apart form the parallelizing of the instruction code and the input data on the two pins DQ0
and DQ1, the instruction functionality is exactly the same as the Write Non Volatile
Configuration Register (WNVCR) instruction of the Extended SPI protocol, please refer to
Section 9.1.29: Write NV Configuration Register
Figure 65. Write NV Configuration Register instruction sequence DIO-SPI
Read Volatile Configuration Register
The Read Volatile Configuration Register (RDVCR) instruction allows the Volatile
Configuration Register to be read. See
DQ0
DQ1
C
S
0
Instruction
1
2
3
7
6
Table 6.: Volatile Configuration
4
LS Byte
5
4
5
Byte
3
2
6
for further details.
NVCR In
1
0
7
15 13 11 9
14 12 10 8
8
MS Byte
9 10 11
Byte
Dual_Write_NVCR
Register.