N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 130

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

9.2.23
9.2.24
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Read Volatile Enhanced Configuration Register
The Read Volatile Enhanced Configuration Register (RDVECR) instruction allows the
Volatile Configuration Register to be read.
Figure 68. Read Volatile Enhanced Configuration Register instruction sequence
Write Volatile Enhanced Configuration Register
The Write Volatile Enhanced Configuration register (WRVECR) instruction allows new
values to be written to the Volatile Enhanced Configuration register. Before it can be
accepted, a write enable (WREN) instruction must previously have been executed. In case
of Fast POR, the WREN instruction is not required because a WREN instruction gets the
device out from the Fast POR state (See
Apart form the parallelizing of the instruction code and the input data on the two pins DQ0
and DQ1, the instruction functionality is exactly the same as the Write Volatile Enhanced
Configuration Register (WRVECR) instruction of the Extended SPI protocol, please refer to
Section 9.1.33: Write Volatile Enhanced Configuration Register
DQ0
DQ1
C
S
DIO-SPI
0
Instruction
1
2
3
7
6
4
Configuration Register Out
Section 11.1: Fast
5
4
5
Byte
Volatile Enhanced
3
2
6
1
0
7
7
6
8
5
4
9 10 11
POR).
Byte
Dual_Read_VECR
3
2
for further details.
1
0