N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 33

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Figure 8.
A Flag Status Register (FSR), 8 bits, is also available to check the status of the device,
detecting possible errors or a Program/Erase internal cycle in progress.
Each register can be read and modified by means of dedicated instructions in all the 3
protocols (Extended SPI, DIO-SPI, and QIO-SPI).
Reading time for all registers is comparable; writing time instead is very different: NVCR bits
are set as Flash Cell memory content requiring a longer time to perform internal writing
cycles. See
Register download executed only
during the power on phase
(Non Volatile Configuratio n Register)
Table 33.: AC
Non Volatile and Volatile configuration Register Scheme
NVCR
Characteristics.
(internal Configuration Register)
Device behaviour
iCR
VCR
Co nfiguratio n Register)
and VECR
Registers download executed after
a WRVCR or WRVECR
instructions, it overwrites NVCR
configurations on iCR
(Volatile Co nfiguratio n Register)
(Volatile Enhanced
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