N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 89

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

9.1.11
The Write Enable Latch (WEL) bit is reset under the following conditions:
Figure 19. Write Disable instruction sequence
Page Program (PP)
The Page Program (PP) instruction allows bytes to be programmed in the memory
(changing bits from 1 to 0). Before it can be accepted, a Write Enable (WREN) instruction
must previously have been executed. After the Write Enable (WREN) instruction has been
decoded, the device sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by driving Chip Select (S) Low, followed by
the instruction code, three address bytes and at least one data byte on Serial Data input
(DQ0). If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that
goes beyond the end of the current page are programmed from the start address of the
S
C
DQ0
DQ1
Power-up
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction completion
Write lo Lock Register (WRLR) instruction completion
Write Non Volatile Configuration Register (WRNVCR) instruction completion
Write Volatile Configuration Register (WRVCR) instruction completion
Write Volatile Enhanced Configuration Register (WRVECR) instruction completion
Page Program (PP) instruction completion
Dual Input Fast Program (DIFP) instruction completion
Dual Input Extended Fast Program (DIEFP) instruction completion
Quad Input Fast Program (QIFP) instruction completion
Quad Input Extended Fast Program (QIEFP) instruction completion
Program OTP (POTP) instruction completion
Subsector Erase (SSE) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
High Impedance
0
1
2
Instruction
3
4
5
6
7
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