N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 88

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

9.1.10
88/185
S
C
DQ0
DQ1
polling instructions (to check if the internal cycle is finished by mean of the WIP bit of the
Status Register or of the Program/Erase controller bit of the Flag Status register): to verify if
the POR sequence is completed is possible to check the WIP bit in the Status Register or
the Program/Erase Controller bit in the Flag Status Register, please note that the
Program/Erase Controller bit in the Flag status register has the reverse logical polarity with
respect to the Status Register WIP bit.
At the end of the POR sequence the WEL bit is low, so the next modify instruction can be
accepted.
Figure 18. Write Enable instruction sequence
Write Disable (WRDI)
The Write Disable (WRDI) instruction (Figure 9) resets the Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
High Impedance
0
1
2
Instruction
3
4
5
6
7
AI13731