N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 131

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

9.2.25
S
C
DQ0
DQ1
Figure 69. Write Volatile Enhanced Configuration Register instruction sequence
Deep Power-down (DP)
The Deep-Power-down (DP) instruction sets the device in Deep Power-down mode. Apart
form the parallelizing of the instruction code on the two pins DQ0 and DQ1, the instruction
functionality is exactly the same as the Deep Power-down (DP) instruction of the Extended
SPI protocol. The instruction sequence is shown in
sequence.
Figure 70. Deep Power-down instruction sequence
DQ0
DQ1
C
S
0
Instruction
1
DIO-SPI
2
3
0
Instruction
1
2
3
7
6
4
t
DP
Configuration Register In
5
4
5
Byte
Standby mode
Volatile Enhanced
3
2
6
1
0
Figure 70: Deep Power-down instruction
7
7
6
8
5
4
9 10 11
Deep power-down mode
Byte
Dual_Write_VECR
3
2
1
0
Dual_DP
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