N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 160

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

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S
C
DQ0
DQ1
DQ2
DQ3
Release from Deep Power-down (RDP)
Once the device has entered the Deep Power-down mode, all instructions are ignored
except the Release from Deep Power-down (RDP) instruction. Executing this instruction
takes the device out of the Deep Power-down mode. Apart form the parallelizing of the
instruction code on the two pins DQ0, DQ1, DQ2 and DQ3, the instruction functionality is
exactly the same as the Release from Deep-Power-down (RDP) instruction of the Extended
SPI protocol. The instruction sequence is shown in
Figure 101. Deep Power-down instruction sequence
Instruction
0
1
High Impedance
Deep power-down mode
t
RDP
Figure
Standby mode
101.
Quad_RDP