N25Q128A11B1240E NUMONYX, N25Q128A11B1240E Datasheet - Page 145

• Manufacturer Part Number: N25Q128A11B1240E
• Manufacturer: NUMONYX

Specifications of N25Q128A11B1240E

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 7ns
• Interface Type: Serial (SPI)
• Boot Type: Bottom
• Address Bus: 1b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: TBGA
• Program/erase Volt (typ): 1.7 to 2/8.5 to 9.5V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Supplier Unconfirmed

N25Q128 - 1.8 V
Instructions
Figure 86. Program/Erase Suspend instruction sequence QIO-SPI
S
0
1
C
Instruction
DQ0
DQ1
DQ2
DQ3
Quad_Program_Erase_Suspend
9.3.12
Program/Erase Resume
After a Program/Erase suspend instruction, a Program/Erase Resume instruction is
required to continue performing the suspended Program or Erase sequence.
Apart form the parallelizing of the instruction code on the four pins DQ0, DQ1, DQ2 and
DQ3, the instruction functionality is exactly the same as the Program/Erase Resume (PER)
instruction of the Extended SPI protocol, please refer to
Section 9.1.21: Program/Erase
Resume
for further details.
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