MT29F1G08ABADAWP-IT:D Micron Technology Inc, MT29F1G08ABADAWP-IT:D Datasheet - Page 51

• Manufacturer Part Number: MT29F1G08ABADAWP-IT:D
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABADAWP-IT:D

• Lead Free Status / Rohs Status: Compliant

READ MODE (00h)
READ PAGE (00h-30h)
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
The READ MODE (00h) command disables status output and enables data output for
the last-selected die (LUN) and cache register after a READ operation (00h-30h,
00h-3Ah, 00h-35h) has been monitored with a status operation (70h). This command is
accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1). It is also accepted by
the die (LUN) during READ PAGE CACHE (31h, 00h-31h) operations
(RDY = 1 and ARDY = 0).
The READ PAGE (00h–30h) command copies a page from the NAND Flash array to its
respective cache register and enables data output. This command is accepted by the die
(LUN) when it is ready (RDY = 1, ARDY = 1).
To read a page from the NAND Flash array, write the 00h command to the command
register, then write n address cycles to the address registers, and conclude with the 30h
command. The selected die (LUN) will go busy (RDY = 0, ARDY = 0) for
transferred.
To determine the progress of the data transfer, the host can monitor the target's R/B#
signal or, alternatively, the status operations (70h) can be used. If the status operations
are used to monitor the LUN's status, when the die (LUN) is ready
(RDY = 1, ARDY = 1), the host disables status output and enables data output by issuing
the READ MODE (00h) command. When the host requests data output, output begins
at the column address specified.
During data output the RANDOM DATA READ (05h-E0h) command can be issued.
When internal ECC is enabled, the READ STATUS (70h) command is required after the
completion of the data transfer (
error occured. (
t
R_ECC is the data transferred with internal ECC enabled.)
51
t
R_ECC) to determine whether an uncorrectable read
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb x8, x16: NAND Flash Memory
© 2010 Micron Technology, Inc. All rights reserved.
Read Operations
t
R as data is