MT29F1G08ABADAWP-IT:D Micron Technology Inc, MT29F1G08ABADAWP-IT:D Datasheet - Page 59

• Manufacturer Part Number: MT29F1G08ABADAWP-IT:D
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABADAWP-IT:D

• Lead Free Status / Rohs Status: Compliant

Erase Operations
ERASE BLOCK (60h-D0h)
Figure 42: ERASE BLOCK (60h-D0h) Operation
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Erase operations are used to clear the contents of a block in the NAND Flash array to
prepare its pages for program operations.
Erase Operations
The ERASE BLOCK (60h-D0h) command erases one block in the NAND Flash array.
When the die (LUN) is ready (RDY = 1, ARDY = 1), the host should check the FAIL bit to
verify that this operation completed successfully.
The ERASE BLOCK (60h-D0h) command erases the specified block in the NAND Flash
array. This command is accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1).
To erase a block, write 60h to the command register. Then write two address cycles con-
taining the row address; the page address is ignored. Conclude by writing D0h to the
command register. The selected die (LUN) will go busy (RDY = 0, ARDY = 0) for
while the block is erased.
To determine the progress of an ERASE operation, the host can monitor the target's R/
B# signal, or alternatively, the status operation (70h) can be used. When the die (LUN) is
ready (RDY = 1, ARDY = 1) the host should check the status of the FAIL bit.
Cycle type
I/O[7:0]
RDY
Command
60h
Address
R1
Address
59
R2
Command
D0h
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WB
1Gb x8, x16: NAND Flash Memory
t BERS
© 2010 Micron Technology, Inc. All rights reserved.
Erase Operations
t
BERS