H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 17

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 0.0 / Jul. 2008
Operating
Output High Voltage Level
Output Low Current (R/B)
Stand-By Current (CMOS)
Outpul Low Voltage Level
Current
Output Leakage Current
Stand-by Current (TTL)
Input Leakage Current
Input High Voltage
Input Low Voltage
Parameter
Sequential
Program
Erase
Read
Input and Output Timing Levels
Output Load (2.5V - 3.6V)
Input Rise and Fall Times
I
Symbol
Table 8 : DC and Opeating Characteristics
OL
Input Pulse Levels
I
I
I
I
I
V
V
V
I
V
CC1
CC2
CC3
CC4
CC5
I
(R/B) V
LO
OH
OL
LI
IH
IL
Parameter
Table 9 : AC Test Conditions
t
CE = V
CE = V
V
V
I
I
RC
OH
OL
IN
OUT
OL
= 25 ns, CE = V
= 0.4 V
= 2.1 mA
= 0 to 3.6 V
= - 400 uA
= 0 to 3.6 V
IH
CC
Test Conditions
, WP = 0 V/V
- 0.2, WP = 0 V / V
-
-
-
-
IL,
I
OUT
CC
8 Gbit (1024 M x 8 bit) NAND Flash
= 0 mA
CC
1 TTL GATE and CL = 50 pF
0.8 x V
Min
-0.3
2.4
0 V to V
8
-
-
-
-
-
-
-
-
3.3 Volt
V
Value
CC
5 ns
CC
/ 2
H27U8G8T2B Series
3.3 Volt
CC
Typ
15
15
15
10
10
-
-
-
-
-
-
-
V
0.2 x V
Preliminary
CC
Max
±10
±10
0.4
30
30
30
50
1
+ 0.3
-
-
CC
Unit
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
17