H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 45

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

blocks are valid. A Bad Block does not affect the performance of valid blocks because it is isolated from the bit line and
common source line by a select transistor. The devices are supplied with all the locations inside valid blocks erase (FFh).
The Bad Block Information is written prior to shipping. Any block where the 1st byte in the spare area of the Last or (Last-
2)th page (if the last page is bad) does not contain FFh is a Bad Block. The Bad Block Information must be read before
any erase is attempted as the Bad Block Information may be erased. For the system to be able to recognize the Bad Blocks
based on the original information it is recommended to create a Bad Block table following the flowchart shown in Figure
32. The 1st block, which is placed on 00h address, is guaranteed to be a valid one.
Rev 0.0 / Jul. 2008
Bad Block Management
Devices with bad blocks have the same quality level and the same AC and DC characteristics as devices where all the
NOTE :
- Make sure that FFh at the column address 4,096 of the last page and last-2th page
Figure 32 : Bad Block Management Flowchart
8 Gbit (1024 M x 8 bit) NAND Flash
H27U8G8T2B Series
Preliminary
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