H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 40

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 0.0 / Jul. 2008
I/Ox
R/B
I/Ox
R/B
I/Ox
R/B
6
7
8
00h
Figure 25 : Multi-Plane Copy Back for 2 KB buffer (2)
85h
81h
Col. Add 1,2 & Row Add. 1,2,3
Col. Add 1,2 & Row Add. 1,2,3
A0 ~ A12 : Fixed “Low”
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
Col. Add 1,2 & Row Add. 1,2,3
A0 ~ A12 : Valid
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
1
Address (5 Cycle)
Destination Address
A0 ~ A12 : Valid
A13 ~ A19 : Valid
A20
A21 ~ A30 : Valid
Destination Address
Address (5 Cycles)
Address (5 Cycles)
2
: Fixed “High”
: Fixed “High”
4
: Fixed “High”
1
05h
Data
Data
6
NOTE
1. Copy Back Program operation is allowed only within the same memory plane.
2. Any Command between 11h and 81h is prohibited except 70h and FFh
A0 ~ A12 : Valid
Address (2 Cycle)
85h
Col. Add 1,2
85h
8
8 Gbit (1024 M x 8 bit) NAND Flash
Address (2 Cycles)
Address (2 Cycles)
Col. Add 1,2
Col. Add 1,2
3
E0h
5
Data
Data
10
Data Output ( 2 KB)
H27U8G8T2B Series
7
10h
tPROG
9
10
Preliminary
7
8
40