H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 24

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 0.0 / Jul. 2008
I/Ox
R/B
CE
RE
CLE
CE
ALE
WE
I/Ox
Figure 8 : Sequential Out Cycle after Read (CLE = L, WE = H, ALE = L)
tRR
tALS
tREA
tWP
Figure 7 : Input Data Latch Cycle
tDS
DIN 0
Dout
tWC
tRC
tDH
tWH
tREH
Notes: Transition is measured at +/-200mV from steady state voltage with load.
tWP
tREA
tDS
DIN 1
This parameter is sampled and not 100% tested. (tCHZ, tRHZ)
tRHOH starts to be valid when frequency is lower than 33MHz.
tRLOH is valid when frequency is higher than 33MHz
tDH
Dout
tWH
8 Gbit (1024 M x 8 bit) NAND Flash
tRHZ
tWP
DIN final
tDS
tDH
tCH
tCLH
tREA
H27U8G8T2B Series
Dout
tRHOH
tRHZ
tCOH
tCHZ
Preliminary
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