H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 36

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

R/B
I/Ox
R/B
I/Ox
R/B
I/Ox
R/B
I/Ox
Rev 0.0 / Jul. 2008
60h
1
2
3
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
85h
Col. Add 1,2 & Row Add. 1,2,3
Address (3 Cycle)
Row Add. 1,2,3
00h
00h
A0 ~ A12 : Fixed “Low”
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
Destination Address
Col. Add 1,2 & Row Add. 1,2,3
Col. Add 1,2 & Row Add. 1,2,3
Add. (5Cycles)
: Fixed “Low”
A0 ~ A12 : Fixed “Low”
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
A0 ~ A12 : Fixed “Low”
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
Address (5 Cycle)
Address (5 Cycle)
: Fixed “Low”
: Fixed “High”
: Fixed “Low”
60h
Figure 22 : Multiplane Copy Back
11h
A13 ~ A19 : Valid
A20
A21 ~ A30 : Valid
Address (3 Cycle)
05h
05h
Row Add. 1,2,3
tDBSY
: Fixed “High”
A0 ~ A12 : Valid
A0 ~ A12 : Valid
Address (2 Cycle)
Address (2 Cycle)
Col. Add 1,2
Col. Add 1,2
81h
Col. Add 1,2 & Row Add. 1,2,3
8 Gbit (1024 M x 8 bit) NAND Flash
A0 ~ A12 : Fixed “Low”
A13 ~ A19 : Valid
A20
A21 ~ A30 : Valid
Destination Address
35h
Add. (5Cycles)
: Fixed “High”
E0h
E0h
tR
H27U8G8T2B Series
10h
Data Output
Data Output
I/O 1 = 0 Successful Program in plane 0
I/O 1 = 1 Error in plane 0
I/O 2 = 0 Successful Program in plane 1
I/O 2 = 1 Error in plane1
tPROG
Preliminary
70h
36
1
2
3
I/O