H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 46

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will give
errors in the Status Register.
replaced by re-programming the current data and copying the rest of the replaced block to an available valid block.
NOTE :
1. An error occurs on the Block A during program or erase operation.
2. Data in Block A is copied to same location in Block B which is valid block.
3. N
4. Bad block table should be updated to prevent from erasing or programming Block A
Rev 0.0 / Jul. 2008
Bad Block Replacement
Over the lifetime of the device additional Bad Blocks may develop. In this case the block has to be replaced by copying
The failure of a page program operation does not affect the data in other pages in the same block, the block can be
Refer to Table 19 and Figure 33 for the recommended procedure to follow if an error occurs during an operation.
th
data of block A which is in controller buffer memory is copied into n
n
th
page
Operation
Program
Erase
Read
Failure
Figure 33 : Bad Block Replacement
Block A
FFh
Data
Table 19 : Block Failure
(1)
Buffer memory of the controller
8 Gbit (1024 M x 8 bit) NAND Flash
(2)
(3)
Recommended Procedure
ECC (with 4 bits / 512 bytes)
th
Block Replacement
Block Replacement
page of Block B
Block B
H27U8G8T2B Series
FFh
Data
Preliminary
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