H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 21

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 0.0 / Jul. 2008
(Without Spare Area)
(Without Spare Area)
Between different dice
Serial Access Time
Programmed Pages
Interleave Program
(Byte / 512Byte)
Spare Area Size
Simultaneously
Organization
Die / Package
Write Cache
Block Size
Page Size
Number of
Cell Type
Table 16 : 3rd Byte of Device Identifier Description
Table 17 : 4th Byte of Device Identifier Description
1KB
2KB
4KB
8KB
8
16
50 ns
30 ns
25 ns
Reserved
64K
128K
256K
512KB
X8
X16
1
2
4
8
1 bit / cell
2 bit / cell
3 bit / cell
4 bit / cell
1
2
4
8
Not Supported
Supported
Not Supported
Supported
Description
Description
IO7
0
0
1
1
IO7
0
1
IO6
0
1
8 Gbit (1024 M x 8 bit) NAND Flash
IO6
0
1
IO5-4
0 0
0 1
1 0
1 1
IO5 IO4
0 0
0 1
1 0
1 1
IO3
0
1
0
1
H27U8G8T2B Series
IO3 IO2
0 0
0 1
1 0
1 1
IO2
0
1
Preliminary
IO1 IO0
IO1-0
0 0
0 1
1 0
1 1
0 0
0 1
1 0
1 1
21