H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 18

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 0.0 / Jul. 2008
NOTE :
Typical program time is defined as the time when which more than 50 % of the whole pages are programmed at
Vcc = 3.3 V and 25 ℃.
Dummy Busy Time for Multiplane Program
Program Time / Multiplane Program Time
Block Erase Time / Multiplane Erase Time
Number of partial Program Cycles
Input / Output Capacitance
Input Capacitance
in the same page
Parameter
Table 10 : Pin Capacitance (TA = 25
Item
Table 11 : Program / Erase Characteristics
Symbol
C
C
I/O
IN
Symbol
t
t
t
PROG
Nop
DBSY
BERS
8 Gbit (1024 M x 8 bit) NAND Flash
Test Condition
V
V
IN
IL
Min
= 0V
℃
= 0V
-
-
-
-
, f = 1.0 MHz)
Typ
800
2.5
H27U8G8T2B Series
1
-
Min
-
-
2000
Max
10
Max
2
1
Preliminary
10
10
Cycle
Unit
Unit
ms
us
us
pF
pF
18