H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 48

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

I/O0~7
R/B
Rev 0.0 / Jul. 2008
The Backward Compatibility (2KByte/page operation)
1. Page Program
2. Copy Back Program
Note :
Any command between 11h and 80h is prohibited except 70h and FFh.
Note:
1. Copy-Back Program operation is allowed only within the same memory plane.
2. Any command between 11h and 85h is prohibited except 70h/F1h and FFh.
3. On the same plane, it’s prohibited to operate copy-back program from an odd address page(source page) to an even
R/B
I/Ox
R/B
I/Ox
address page(target page) or from an even address page(source page) to an odd page(target page). Therefore, the
copy-back program is permitted just between odd address pages or even address pages
80h
1
Col. Add 1,2 & Row Add. 1,2,3
A0 ~ A12 : Valid
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
A0 ~ A12 : Valid
A13 ~ A19 : Fixed “Low”
A20
A21 ~ A30 : Fixed “Low”
Address & Data Input
up to 2112 Byte Data
85h
Col. Add 1,2 & Row Add. 1,2,3
: Valid
: Must be same with the source plane
up to 2112 Byte Data
Destination Address
Add. (5Cycles)
11h
Data
00h
Col. Add 1,2 & Row Add. 1,2,3
11h
Add. (5Cycles)
tDBSY
Source Address
Note
tDBSY
85h
80h
Col. Add 1,2 & Row Add. 1,2,3
35h
8 Gbit (1024 M x 8 bit) NAND Flash
A0 ~ A12 : Valid
A13 ~ A19 : Valid
A20
A21 ~ A30 : Valid
up to 2112 Byte Data
Add. (5Cycles)
Destination Address
Col. Add 1,2 & Row Add. 1,2,3
A0 ~ A12 : Valid
A13 ~ A19 : Valid
A20
A21 ~ A30 : Valid
Address & Data Input
tR
up to 2112 Byte Data
: Must be same with the source plane
Data Output
: Must be same with the previous
Data
H27U8G8T2B Series
10h
10h
tPROG
Preliminary
tPROG
1
48
70h