H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 33

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

CLE
CE
WE
ALE
RE
I/Ox
R/B
Rev 0.0 / Jul. 2008
R/B
I/O0~7
Ex.) Address Restriction for Multi-Plane Block Erase Operation
Block Erase Setup Command1
60h
tWC
60h
Row Add1
A13 ~ A19 : Fixed ‘Low’
A20
A21 ~ A30 : Fixed ‘Low’
Row Add1,2,3
Row Address
Address
Row Add2
: Fixed ‘Low’
Row Add3
60h
Block Erase Setup Command2
A13 ~ A19 : Fixed ‘Low’
A20
A21 ~ A30 : Valid
Figure 19 : Multiplane Block Erase
Row Add1,2,3
tWC
60h
Address
: Fixed ‘High’
Row Add1
Row Address
Row Add2
D0h
Row Add3
Erase Confirm Command
8 Gbit (1024 M x 8 bit) NAND Flash
D0h
tWB
70h
Read Status Command
tBERS
Busy
H27U8G8T2B Series
I/O 1 = 0 Successful Program in plane 0
I/O 1 = 1 Error in plane 0
I/O 2 = 0 Successful Program in plane 1
I/O 2 = 1 Error in plane1
70h
tWHR
Preliminary
I/O
33