H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 8

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 0.0 / Jul. 2008
NOTE : With the CE don't care option CE high during latency time does not stop the read operation
PAGE READ
MULTI-PLANE READ
READ FOR COPY-BACK
MULTIPLANE READ FOR COPYBACK
READ ID
RESET
PAGE PROGRAM
COPY BACK PROGRAM
MULTI-PLANE PROGRAM
MULTI-PLANE COPY BACK PROGRAM
BLOCK ERASE
MULTI-PLANE BLOCK ERASE
READ STATUS REGISTER
RANDOM DATA INPUT
RANDOM DATA OUTPUT
MULTI-PLANE RANDOM DATA OUTPUT
PAGE PROGRAM WITH
BACKWARD COMPATIBILITY (2 KB)
COPY BACK PROGRAM WITH
BACKWARD COMPATIBILITY (2 KB)
CLE
H
H
X
X
X
X
X
L
L
L
L
ALE
H
H
X
X
X
X
X
L
L
L
L
FUNCTION
CE
H
X
X
X
X
L
L
L
L
L
L
Rising
Rising
Rising
Rising
Rising
WE
H
H
X
X
X
X
Table 5 : Mode Selection
Table 4 : Command Set
Falling
RE
00h
60h
00h
60h
90h
FFh
80h
85h
80h
85h
60h
60h
70h
85h
05h
00h
80h
85h
1st
H
H
H
H
H
H
X
X
X
X
0 V / Vcc
8 Gbit (1024 M x 8 bit) NAND Flash
WP
2nd
D0h
30h
60h
35h
60h
10h
10h
11h
11h
60h
E0h
05h
11h
11h
H
H
H
H
H
X
X
X
X
L
-
-
-
-
Write Mode
Read Mode
Data Input
Data Output
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
Stand By
D0h
3rd
30h
35h
81h
81h
E0h
80h
85h
-
-
-
-
-
-
-
-
-
-
H27U8G8T2B Series
Address Input (5 cycles)
Address Input (5 cycles)
4th
10h
10h
10h
10h
MODE
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Command Input
Command Input
Preliminary
During Busy
Acceptable
Command
Yes
Yes
8