H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 19

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 0.0 / Jul. 2008
NOTE :
1) If Reset Command (FFh) is written at Ready State, the device goes into Busy for maximum 5 us
2) Program / Erase Enable Operation : WP high to WE high
Program / Erase Disable Operation : WP low to WE high
Device Resetting Time (Read/Program/Erase)
Data Transfer from Cell to Register
Address to Data Loading time
RE High to Output Hold
CE High to Output hold
RE High to Output Hi-Z
CE High to Output Hi-Z
RE Low to Output Hold
Output Hi-Z to RE Low
Write Protection Time
RE High to WE Low
WE High to RE Low
WE High Hold time
RE High Hold Time
CE low to WE low
Ready to RE Low
WE High to Busy
Read Cycle Time
Data Setup time
Write Cycle time
ALE to RE Delay
CLE to RE Delay
RE Access Time
CE Access Time
CLE Setup time
WE Pulse width
ALE Setup time
Data Hold time
RE Pulse Width
CLE Hold time
CE Setup time
ALE Hold time
CE Hold time
Parameter
Table 12 : AC Timing Characteristics
Symbol
t
t
t
t
t
t
t
t
RHOH
t
WW
8 Gbit (1024 M x 8 bit) NAND Flash
t
t
t
t
t
t
t
t
RLOH
t
t
t
t
t
t
RHW
WHR
t
t
t
t
t
t
t
t
COH
RHZ
CHZ
REH
t
CLS
CLH
ALS
ALH
ADL
CLR
REA
CEA
RST
WC
WH
WB
WP
DH
t
CS
CH
DS
AR
RR
RP
RC
CR
IR
R
2)
Min
100
100
12
20
12
12
12
25
10
70
10
10
20
12
25
15
10
15
10
80
5
5
5
5
5
0
3.3 Volt
H27U8G8T2B Series
2/20/500
Max
100
100
60
20
30
50
Preliminary
1)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
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