H27U8G8T2BTR-BC HYNIX SEMICONDUCTOR, H27U8G8T2BTR-BC Datasheet - Page 20

• Manufacturer Part Number: H27U8G8T2BTR-BC
• Description: 58T1893
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27U8G8T2BTR-BC

• Memory Type: Flash - NAND
• Memory Size: 8192Mbit
• Memory Configuration: 1024M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 0.0 / Jul. 2008
Part Number
H27U8G8T2B
DEVICE IDENTIFIER BYTE
IO
0
1
2
3
4
5
6
7
2
3
1
4
5
Page Program
nd
st
rd
th
th
Write Protect
Ready/Busy
Ready/Busy
Pass / Fail
Pass / Fail
Pass / Fail
Plane 0
Plane 1
Voltage
NA
NA
3.3V
Table 14 : Device Identifier Coding
Table 13 : Status Register Coding
Width
Table 15 : Read ID Data Table
Bus
Block Erase
Write Protect
x8
Ready/Busy
Ready/Busy
Pass / Fail
Pass / Fail
Pass / Fail
Plane 0
Plane 1
NA
NA
(Manufacture Code)
Page Size, Block Size, Spare Size, Organization
1st cycle
Write Protect
ADh
Ready/Busy
Ready/Busy
Internal Chip Number, Cell Type, etc.
Read
NA
NA
NA
NA
NA
8 Gbit (1024 M x 8 bit) NAND Flash
Multiplane Information
Manufacturer Code
DESCRIPTION
Device Identifier
Protected: ‘0’ Not Protected: ‘1’
(Device Code)
2nd cycle
D3h
Busy: ‘0’ Ready:’1’
Busy: ‘0’ Ready:’1’
Pass: ‘0’ Fail : ‘1’
Pass: ‘0’ Fail : ‘1’
Pass: ‘0’ Fail: ‘1’
CODING
H27U8G8T2B Series
-
-
cycle
3rd
14h
Preliminary
cycle
4th
B6h
cycle
5th
34h
20